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| KSA992 KSA992 Audio Frequency Low Noise Amplifier * Complement to KSC1845 1 TO-92 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -120 -120 -5 -50 -10 500 150 -55 ~ 150 Units V V V mA mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol ICBO ICEO IEBO hFE1 hFE2 VBE (on) VCE (sat) fT Cob NV Parameter Collector Cut-off Current Collector Cur-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Voltage Test Condition VCB= -120V, IE=0 VCE= -100V, IB=0 VEB= -5mA, IC=0 VCE= -6V, IC= -0.1mA VCE= -6V, IC= -1mA VCE= -6V, IC= -1mA IC= -10mA, IB= -1mA VCE= -6V, IC= -1mA VCB= -30V, IE=0, f=1MHz VCE = -5.0V, IC = -1.0mA, RG =100KW, GV = 80dB, f = 10Hz to 1.0KHz 50 150 200 -0.55 500 500 -0.61 -0.09 100 2 25 3 40 Min. Typ. Max. -50 -1 -50 800 -0.65 -0.3 V V MHz pF mV Units nA A nA hFE2 Classification Classification hFE2 P 200 ~ 400 F 300 ~ 600 E 400 ~ 800 (c)2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 KSA992 Typical Characteristics -1.0 -10 IB = -1.2A IB = -1.2A IB = -24A IB = -20A IB = -16A IC[mA], COLLECTOR CURRENT -0.8 IB = -1.0A IB = -0.8A IC[mA], COLLECTOR CURRENT -8 -0.6 -6 IB = -12A IB = -0.6A -0.4 -4 IB = -8A IB = -0.4A -0.2 IB = -0.2A IB = 0 0 -20 -40 -60 -80 -100 -2 IB = -4A 0.0 0 0 -1 -2 IB = 0 -3 -4 -5 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. Static Characteristic 1000 VCE(sat), VBE(sat)[V], SATURATION VOLTAGE -10 VCE= -6V 800 IC = 10 - IB hFE, DC CURRENT GAIN -1 VBE(sat) 600 400 -0.1 VCE(sat) 200 0 -0.01 -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 10 1000 IE=0 f = 1MHz VCE = -6V Cob [pF], CAPACITANCE 100 1 10 0.1 -1 -10 -100 -1000 1 0.1 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE IE[mA], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product (c)2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 KSA992 Typical Characteristics (Continued) 800 700 PC[mW], POWER DISSIPATION 600 500 400 300 200 100 0 0 25 50 o 75 100 125 150 175 Ta[ C], AMBIENT TEMPERATURE Figure 7. Power Derating (c)2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 KSA992 Package Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. B2, August 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2004 Fairchild Semiconductor Corporation Rev. I11 |
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